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  WSH410 winson reserves the right to make changes to improve reliability or manufacturability. hall effect sensor ic with complementary output drivers and frequency generator features: operate from 2.8v to 20v supply voltage. on-chip hall sensor. internal bandgap regulator allows temperature compensated operations and a wide operating voltage range. high output sinking capability up to 400ma for driving large load. lower current change rate reduces the peak output voltages during switching. available in rugged low profile sip-4l/sip-5l packages. built-in protection diode for reverse power supply fault. general description: WSH410 is designed to integrate hall sensor with complementary output drivers and frequency generator together on the same chip, it is suitable for speed measurement, revolution counting, positioning, and dc brushless motors. it includes a temperature compensated voltage regulator, a differential amplifier, a hysteresis controller, two open-collector output drivers capable of sinking 400ma current load. an on-chip protection diode is implemented to prevent reverse power fault. the temperature-dependent bias increases the supply voltage of the hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. subsequently, the open collector output switches to the appropriate state. WSH410 are rated for operation over temperature range from C 20 ? c to125 ? c and voltage ranges from 2.8v to 20v. name p/i/o pin# description vcc p positive power supply out1 o output pin #1 out2 o output pin #2 vss p ground ? winson semiconductor corp. 2005/8/121
WSH410 winson reserves the right to make changes to improve reliability or manufacturability. name p/i/o pin# description vcc p positive power supply out1 o output pin #1 out2 o output pin #2 fg o frequency generator vss p ground supplyvoltage vcc --------------------------20v output / fg breakdown voltagevout/vfg--------------------- 25v magnetic flux density b --------------------------unlimited reverse protection voltage vr--------------------------20v outputcurrent continuous ic--------------------------300ma hold current ih ------------------------ 400ma peak current ip ------------------------- 800ma fg on current (continuous) if -------------------------- 20ma operating temperaturerange ta--------------------------(-20 ? c to +125 ? c) storage temperaturerange ts--------------------------(-65 ? c to +150 ? c) package power dissipation pd -------------------------- 500mwforsip-4l sip-5l (t=+25 ? c,vcc=2.8v to 20v) characteristic symboltestconditions min typmaxunits supply voltage vcc v output saturation voltage vout(sat)vcc=20v,ic=200ma b > bop v fg saturation voltage vfg(sat)vcc=20v,if=10ma b > bop v output leakage current ileakagevcc=20v, b < brp < ua supply current isupplyvcc=20v, output & fg open ma output / fg rising time tr vcc=12v, rl=820 cl=20pf 3.0 us output / fg falling time tf vcc=12v, rl=820 cl=20pf us output / fg time differential t vcc=12v,rl=820 cl=20pf us ? winson semiconductor corp. 2005/8/122
WSH410 winson reserv ? winson semiconductor corp. 2005/8/123 es the right to make changes to improve reliability or manufacturability. characteristics symbolquantity ta= -20 ? c to +90 ? c min typ. max unit operate point bop 70 120 gauss release point brp -120 -70 gauss hysteresis window bop-brp 40 200 gauss sip- 4l: WSH410-xpa n 3 (120 guass) n:non-lead process sip- 5l: WSH410-xpc n 3 (120 guass)
WSH410 winson reserves the right to make changes to improve reliability or manufacturability. sip-4l sip-5l ? winson semiconductor corp. 2005/8/124
WSH410 winson reserves the right to make changes to improve reliability or manufacturability. sip-4l ? winson semiconductor corp. 2005/8/125
WSH410 winson reserves the right to make changes to improve reliability or manufacturability. sip-5l ? winson semiconductor corp. 2005/8/126
WSH410 winson reserves the right to make changes to improve reliability or manufacturability. sip-4l figure 1. sip-5l figure 2. ? winson semiconductor corp. 2005/8/127


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